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분야 | TC 47/SC 47E : Discrete semiconductor devices |
---|---|
적용범위 | Gives standards for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes, bipolar transistor and field-effet transistors. This consolidated version consists of the first edition (1991), its amendment 1 (1993) and its amendment 2 (1999). Therefore, no need to order amendments in addition to this publication. |
국제분류(ICS)코드 |
31.080.99 : 기타 반도체 장치
31.080.10 : 다이오우드 31.080.30 : 트랜지스터 |
페이지수 | 219 |
Edition | 1.2 |
No. | 표준번호 | 표준명 | 발행일 | 상태 |
---|---|---|---|---|
1 | IEC 60747-4:2007/AMD1:2017 | Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors | 2017-01-30 | 표준 |
2 | IEC 60747-4:2007+AMD1:2017 CSV | Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors | 2017-01-30 | 표준 |
3 | IEC 60747-4:2007 | Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors | 2007-08-23 | 표준 |
4 | IEC 60747-4:1991+AMD1:1993+AMD2:1999 CSV | Semiconductor devices - Discrete devices - Part 4: Microwave devices | 2001-09-26 | 구판 |
5 | IEC 60747-4:1991/AMD2:1999 | Amendment 2 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors | 1999-04-16 | 구판 |
6 | IEC 60747-4:1991/AMD1:1993 | Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors | 1993-10-08 | 구판 |
7 | IEC 60747-4:1991 | Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors | 1991-05-08 | 구판 |
IEC 60747-11:1985 - Semiconductor devices. Discrete devices. Part 11: Sectional specification for discrete devices 상세보기
IEC 60747-3-1:1986 - Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes 상세보기
IEC 60747-3-2:1986 - Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes,excluding temperature-compensated precision reference diodes 상세보기
IEC 60747-8-1:1987 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section One: Blank detail specification for single-gate field-effect transistors up to 5 W and 1 GHz 상세보기
IEC 60747-7-1:1989 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section One: Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification 상세보기
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