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분야 | TC 47/SC 47E : Discrete semiconductor devices |
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적용범위 | Gives the essential ratings and characteristics of the following categories or subcategories of optoelectronic devices which are not intended to be used in the field of fibre optic systems or subsystems: Semiconductor photoemitters, semiconductor photoelectric detectors, semiconductor photosensitive devices, and semiconductor devices utilizing the optical radiation for internal operation. |
국제분류(ICS)코드 | 31.260 : 광전자공학. 레이저 장비 |
페이지수 | 51 |
Edition | 1.0 |
No. | 표준번호 | 표준명 | 발행일 | 상태 |
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1 | IEC 60747-5-2:1997+AMD1:2002 CSV | Discrete semiconductor devices and integrated circuits - Part 5-2: Optoelectronic devices - Essential ratings and characteristics | 2009-11-25 | 폐지(대체) |
2 | IEC 60747-5-2:1997/AMD1:2002 | Amendment 1 - Discrete semiconductor devices and integrated circuits - Part 5-2: Optoelectronic devices - Essential ratings and characteristics | 2002-03-25 | 폐지(대체) |
3 | IEC 60747-5-2:1997 | Discrete semiconductor devices and integrated circuits - Part 5-2: Optoelectronic devices - Essential ratings and characteristics | 1997-09-10 | 폐지(대체) |
IEC 60747-11:1985 - Semiconductor devices. Discrete devices. Part 11: Sectional specification for discrete devices 상세보기
IEC 60747-3-1:1986 - Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes 상세보기
IEC 60747-3-2:1986 - Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes,excluding temperature-compensated precision reference diodes 상세보기
IEC 60747-8-1:1987 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section One: Blank detail specification for single-gate field-effect transistors up to 5 W and 1 GHz 상세보기
IEC 60747-7-1:1989 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section One: Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification 상세보기
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